TSM6963SDCA RVG

Overview

The TSM6963SDCARVG is a dual P-channel MOSFET manufactured by Taiwan Semiconductor. It features a maximum drain-source voltage of 20V and an on-resistance (RDS(on)) of 15mΩ at VGS = -4.5V. The device supports a continuous drain current of 4.8A and a pulsed drain current of 19.2A. Packaged in the SOT-363 (SC-88) surface-mount format, it is designed for low-voltage power switching applications requiring compact form factors.

Feature Summary

• Dual configuration integrates two independent P-channel MOSFETs within a single package to reduce board space.
• Low on-resistance characteristics enable efficient power handling with minimal conduction losses.
• Surface-mount packaging facilitates automated assembly and high-density circuit board layouts.

Applications

• DC-DC converter circuits
• Load switch implementations
• Power management modules

Procurement Notes

Verify the exact ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required electrical tolerances for the target application before finalizing procurement orders.

Selection Notes

Select this component when a dual P-channel solution is required in a small footprint. Ensure the operating voltage does not exceed the 20V limit and that thermal management accommodates the specified current ratings in the chosen enclosure environment.

Part Context

This part belongs to Taiwan Semiconductor's lineup of dual MOSFETs. It serves as a compact alternative to discrete single MOSFETs, offering integrated functionality for differential signaling or complementary switching pairs in space-constrained designs.

Replacement Considerations

Check for direct equivalents from other manufacturers offering identical SOT-363 packaging and matching 20V/15mΩ specifications. Verify pin compatibility and thermal performance metrics before substituting.