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TSM70NB1R4CP ROG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is MOSFET N-CHANNEL 700V 3A TO252. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TSM70NB1R4CP ROG
- Description：MOSFET N-CHANNEL 700V 3A TO252
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.4 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：317 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：28W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for TSM70NB1R4CP ROG
Single FETs, MOSFETs Overview
The TSM70NB1R4CP ROG is a single N-channel Super Junction Generation 2 (SJ G2) power MOSFET manufactured by Taiwan Semiconductor. It features a silicon technology base with an enhancement mode channel configuration. Key electrical parameters include a drain-source breakdown voltage (Vds) of 700 V and a continuous drain current (Id) of 3 A. The device exhibits a maximum on-resistance (Rds On) of 1.1 Ohms, a gate threshold voltage (Vgs th) of 2 V, and a total gate charge (Qg) of 7.4 nC. It operates within a temperature range of -55°C to +150°C, supports a power dissipation of 28 W, and has a fall time of 8 ns.
Single FETs, MOSFETs Feature Summary
- Utilizes Super Junction Generation 2 technology for enhanced efficiency
- Designed as a single N-channel enhancement mode transistor
- Capable of high-voltage operation up to 700 V
Single FETs, MOSFETs Applications
- High-frequency switching power supplies
- DC-DC converter circuits
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'ROG' against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure the component matches the required SJ G2 generation and that the 700V rating aligns with system insulation requirements. Confirm RoHS compliance status through the latest documentation.
Single FETs, MOSFETs Selection Notes
Select this component when a 700V rated N-channel MOSFET with low gate charge is required for efficient switching. The 1.1 Ohm Rds On value suits moderate current applications around 3 A. Consider the thermal performance at 28 W dissipation and the -55°C to +150°C operating range for environmental suitability.
Single FETs, MOSFETs Part Context
This part belongs to the Taiwan Semiconductor lineup of high-voltage power MOSFETs. It represents the SJ G2 series, which utilizes super junction architecture to optimize the trade-off between on-resistance and breakdown voltage compared to conventional planar technologies.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for equivalent 700V, 3A N-channel MOSFETs with similar Rds On and Qg characteristics. Verify pinout compatibility and thermal resistance values before replacing.
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