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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 15A 8SOP
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：15A (Tc), 13A (Tc)
- Rds On (Max) @ Id, Vgs：16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 4.5V, 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：646pF @ 15V, 1089pF @ 15V
- Power - Max：6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The TSM8568CS RLG is a dual N- and P-channel Power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a 30V Drain-Source voltage rating for both channels. The N-channel exhibits a maximum on-resistance of 16mΩ at VGS=10V, while the P-channel reaches 24mΩ at VGS=-10V. Total gate charge is specified at 7nC for the N-channel and 11nC for the P-channel at VGS=4.5V. Continuous drain current ratings are 15A (N-ch) and 13A (P-ch) at TC=25°C. The device operates within a junction temperature range of -55°C to +150°C and utilizes an SOP-8 package.
Feature Summary
- Low on-state resistance designed to minimize conductive losses during operation
- Optimized low gate charge characteristics enabling fast power switching speeds
- Validated through 100% testing for Unclamped Inductive Switching (UIS) capability and gate resistance
Applications
- DC-DC Converters
- Power Routing Systems
- Motor Drives
Procurement Notes
Verify the specific ordering suffix 'RLG' against official documentation to confirm packaging details, as standard datasheets may list generic packing information. Ensure compliance with RoHS directive 2011/65/EU requirements matches project specifications. Confirm halogen-free status per IEC 61249-2-21 standards before finalizing procurement orders.
Selection Notes
Select this component for applications requiring complementary N- and P-channel switching in a single package. Evaluate thermal performance using the provided Junction-to-Ambient resistance of 78°C/W for ambient-cooled designs. Verify that the 30V breakdown voltage provides sufficient margin for the target circuit's operating voltage levels.
Part Context
This part belongs to the TSM8568 series of dual MOSFETs from Taiwan Semiconductor. It integrates both N-channel and P-channel logic-level devices into one compact SOP-8 footprint. This integration simplifies board layout and reduces component count compared to using discrete single-channel transistors for half-bridge or synchronous rectifier configurations.
Replacement Considerations
Direct replacements must match the 30V rating, SOP-8 package, and complementary channel configuration. Verify pinout compatibility and ensure equivalent or superior RDS(on) and gate charge specifications to maintain circuit performance without redesign.
