TSM8568CV RGG

$0.95

Description：-30V, -4.5A, COMPLEMENTARY P-CHA
Series：-

SKU:c7dcfc7f7097 Category: FET, MOSFET Arrays Brand: Taiwan Semiconductor Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：-30V, -4.5A, COMPLEMENTARY P-CHA
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Download product information

TSM8568CV RGG

Overview

The TSM8568CV is a dual N- and P-channel power MOSFET from Taiwan Semiconductor, housed in a PDFN33 package. It features a drain-source voltage rating of ±30V. The N-channel exhibits a maximum on-resistance of 17mΩ at VGS=10V, while the P-channel reaches 33mΩ at VGS=-10V. Continuous drain currents are specified as 29A for the N-channel and -24A for the P-channel at TC=25°C. Total gate charges are 16nC (N-ch) and 21nC (P-ch). The device supports an operating junction temperature range of -55°C to +150°C.

Feature Summary

Low gate charge design optimized for fast power switching applications
Validated for 100% Unclamped Inductive Switching (UIS) and Rg testing

Applications

DC-DC Converters
Motor Drives

Procurement Notes

Verify the specific ordering code suffix against official documentation to confirm packaging details. Confirm RoHS compliance status and halogen-free material composition requirements prior to procurement. Ensure the selected variant matches the required thermal and electrical specifications for the target application environment.

Selection Notes

Select this component based on the ±30V voltage rating and low on-resistance characteristics suitable for efficient power conversion. Consider the PDFN33 package dimensions and thermal resistance values when designing the PCB layout. Evaluate the gate charge parameters to ensure compatibility with the driving circuitry for optimal switching performance.

Part Context

This part belongs to the TSM8568 series of dual MOSFETs manufactured by Taiwan Semiconductor. It integrates complementary N-channel and P-channel devices into a single compact package to facilitate half-bridge or synchronous rectifier configurations.

Replacement Considerations

Consult official substitution lists for verified alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.