TT8J13TCR

Overview

The TT8J13TCR is a dual P-channel MOSFET array manufactured by ROHM Semiconductor, designed for low-voltage logic-level driving applications. It integrates two independent P-channel enhancement-mode transistors within an 8-pin TSST-8 surface-mount package. The device features a drain-source voltage rating of -20 V and a continuous drain current capacity of -2.5 A. Key electrical parameters include a maximum on-resistance (Rds(on)) of 68 mΩ at Vgs = -4.5 V and a gate charge (Qg) of 12 nC. Thermal performance is characterized by a junction-to-ambient thermal resistance of 144 °C/W in free air. The component operates reliably across a temperature range from -55°C to +150°C, with a maximum power dissipation of 650 mW.

Feature Summary

• Logic-level drive capability optimized for 4V operation
• Compact TSST-8 surface-mount packaging for space-constrained designs
• Integrated body diode characteristics for inductive load switching

Applications

• DC-DC converter synchronous rectification
• Motor driver output stages
• Power supply load switches

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet revision to ensure pinout and electrical specifications match the design requirements. Confirm RoHS compliance status and check for any obsolescence notices or lifecycle changes before finalizing procurement plans.

Selection Notes

Select this component when a dual P-channel configuration is required for low-side or high-side switching in 5V or 3.3V logic systems. Ensure the thermal management strategy accounts for the 650 mW power dissipation limit and the 144 °C/W thermal resistance value under the expected ambient conditions.

Part Context

This part belongs to ROHM's QFSP series of small signal MOSFETs, specifically engineered for general-purpose switching applications. The TSST-8 package provides a balance between current handling capability and board space efficiency, distinguishing it from larger power packages while offering better thermal performance than standard SOT-23 arrays.

Replacement Considerations

Direct substitutes may include other dual P-channel MOSFETs in TSST-8 packages with similar Rds(on) and Vgs(th) specifications. Verify pin compatibility and thermal characteristics carefully, as minor variations in gate threshold voltage can affect logic-level driving performance.