TT8J21TR

Overview

The TT8J21TR is a dual P-channel MOSFET array manufactured by Rohm Semiconductor, designed for low-voltage logic-level driving applications. It features an 8-terminal TSST8 surface-mount package with dimensions of 1.9x3.0 mm and a thickness of 0.85 mm. The device supports a drain-source voltage (V_DSS) of -20 V and a continuous drain current (I_D) of -2.5 A at 25°C. Typical on-resistance (R_DS(on)) values are 0.14 Ω at 1.5 V gate drive, 0.068 Ω at 2.5 V, and 0.049 Ω at 4.5 V. The total gate charge (Q_g) is typically 12.0 nC at 4.5 V, with an input capacitance (C_iss) of 1270 pF at 10 V. Power dissipation is rated at 650 mW, and the junction temperature range extends up to 150°C.

Feature Summary

• Dual P-channel configuration optimized for low-voltage logic interfaces
• Logic-level gate drive capability starting at 1.5 V
• Compact TSST8 surface-mount packaging for space-constrained designs

Applications

• Power supply circuits
• General switching applications

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolete status indicators, as this part may be discontinued. Ensure storage conditions remain within the specified -55°C to 150°C range to maintain device integrity prior to assembly.

Selection Notes

Select this component when a dual P-channel MOSFET with low gate drive voltage requirements is needed. Compare R_DS(on) performance at specific operating voltages against alternatives like QH8JA1. Consider the TSST8 package constraints and thermal dissipation limits relative to the application's power requirements.

Part Context

This component belongs to Rohm Semiconductor's discrete semiconductor product line, specifically within the FET and MOSFET array category. It is engineered for surface-mount technology integration in compact electronic systems requiring efficient low-voltage switching capabilities.

Replacement Considerations

The QH8JA1TCR is documented as a similar specification replacement. Note that it uses a different TSMT8 package and offers higher current capacity (-5.0 A) with lower on-resistance at 1.8 V and 2.5 V drives.