TT8J2TR

Overview

The TT8J2TR is a dual P-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features a TSST8 surface-mount package with eight terminals. Key electrical parameters include a drain-source voltage (V_DSS) of -30 V and a continuous drain current (I_D) of ±2.5 A. The device exhibits low on-state resistance, typically 115 mΩ at V_GS = -4 V and 60 mΩ at V_GS = -10 V. Total gate charge (Q_g) is 4.8 nC, supporting fast switching capabilities. Power dissipation is rated at 1.25 W total, with a maximum junction temperature of 150°C.

Feature Summary

• Low on-state resistance optimized for efficient power switching.
• Capable of operation with low voltage drive signals at 4V.
• High power package design suitable for thermal management.

Applications

• General-purpose electronic equipment switching
• Audio visual equipment power control
• Office automation device circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status through the manufacturer's latest release notes. Ensure that ESD protection measures are integrated into the circuit design as recommended in the product notice section of the datasheet.

Selection Notes

Select this component for applications requiring dual P-channel configuration in a compact surface-mount footprint. Evaluate the thermal resistance characteristics relative to the intended PCB layout. Consider the gate threshold voltage range when designing the driving circuitry to ensure reliable turn-on and turn-off states under varying load conditions.

Part Context

This part belongs to the ROHM discrete semiconductor product line, specifically within the FET and MOSFET array category. It utilizes silicon technology and is housed in an 8-terminal TSST8 package. The device is engineered for general-use electronic devices, providing a balance between switching speed and conduction loss in small form-factor designs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers for redesign purposes.

FAQ

What is the typical on-state resistance at a 4V gate drive?

The typical static drain-source on-state resistance (R_DS(on)) is 115 mΩ when measured at a drain current of -1.2 A and a gate-source voltage of -4 V.

Does the TT8J2TR include internal protection diodes?

Yes, the inner circuit diagram indicates the presence of body diodes connected between the source and drain of each channel.

What is the maximum allowable gate-source voltage?

The absolute maximum rating for the gate-source voltage (V_GSS) is ±20 V.