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The TT8M1TR is a complementary MOSFET array manufactured by Rohm Semiconductor, featuring an N-channel and P-channel pair within an 8-TSST surface-mount package. It operates with a drain-source voltage of 20V and supports a continuous drain current of 2.5A. The device is optimized for low-voltage logic applications, offering a typical on-resistance of 0.1 ohms at a 1.5V gate drive. Key electrical characteristics include a total gate charge of 3.6nC and a power dissipation rating of 1W. The component complies with RoHS standards and functions reliably across a storage temperature range of -55°C to 150°C.
Verify the obsolete status of this component before integration into new designs. Confirm availability through authorized distributors for existing production runs. Ensure that any replacement strategy accounts for the discontinuation notice issued by the manufacturer. Check specific ordering suffixes for tape-and-reel packaging requirements.
Select this component for applications requiring a matched N/P pair with 1.5V logic compatibility. Evaluate thermal management capabilities given the 1W power dissipation limit in the TSST8 package. Consider the 20V breakdown voltage when designing for battery systems or low-voltage rails. Verify that the 2.5A current rating meets the peak load requirements of the target circuit.
The TT8M1TR belongs to Rohm's TSST8 series of complementary MOSFET arrays designed for space-constrained electronics. This series emphasizes low on-resistance at reduced gate voltages to improve efficiency in battery-operated equipment. The part represents a discontinued generation of components previously used in consumer electronics and industrial control modules.
No public confirmed substitute part numbers are available for the TT8M1TR.