TTA008B,Q

Single Bipolar Transistors Overview

The TTA008B,Q is a PNP silicon epitaxial type bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It is designed for power amplifier and switching applications, featuring a collector-emitter voltage of 80 V and a continuous collector current rating of 2 A. The device operates with a transition frequency of 100 MHz and supports a maximum power dissipation of 1.5 W in a TO-126N through-hole package. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 500 mA and 2 V, with a collector cutoff current of 100 nA.

Single Bipolar Transistors Feature Summary

• PNP silicon epitaxial structure optimized for power amplification and high-speed switching
• Robust thermal performance within the TO-126N through-hole package
• High current handling capability suitable for moderate power loads

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose switching applications
• Industrial control systems requiring PNP transistor logic

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'Q' against the manufacturer's latest datasheet to confirm compliance with RoHS standards and lead-free requirements. Ensure the TO-126N package dimensions match your PCB footprint constraints. Cross-reference the marking code 'A008B' on received components to authenticate the part against official Toshiba Semiconductor and Storage specifications before integration into production.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 80 V breakdown and 2 A current capacity is required. The 100 MHz transition frequency makes it suitable for medium-frequency switching tasks. Consider the TO-126N package for applications needing robust mechanical mounting and adequate heat dissipation without active cooling solutions compared to smaller surface-mount alternatives.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of bipolar junction transistors, specifically the PNP epitaxial type series. These devices are engineered for reliability in consumer electronics and industrial equipment. The TTA008B,Q represents a standard power transistor option within the broader portfolio of discrete semiconductors offered by Toshiba Semiconductor and Storage for general electronic circuit design.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with direct replacements only through official Toshiba cross-reference lists or authorized distributor substitution tools to ensure electrical parameter alignment.

Single Bipolar Transistors FAQ

What is the marking code for the TTA008B?

The marking code printed on the device body is A008B.

Is the TTA008B,Q RoHS compliant?

Yes, the product is described as Pb-F (lead-free) and RoHS compliant in distributor listings.