TTC4116FU,LF

Single Bipolar Transistors Overview

The TTC4116FU,LF is a silicon NPN epitaxial transistor manufactured by Toshiba Semiconductor and Storage using the PCT process. It is designed for audio frequency general-purpose amplifier applications. The device features a collector-emitter voltage (VCEO) of 50 V and a maximum collector current (IC) of 150 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 400 at IC = 2 mA, a transition frequency (fT) of 80 MHz, and a typical noise figure (NF) of 1 dB. The component operates with a junction temperature up to 150 °C and is housed in a small SC-70 package.

Single Bipolar Transistors Feature Summary

• High voltage and high current capability with VCEO of 50 V and IC of 150 mA
• Excellent hFE linearity with a ratio of 0.95 between 0.1 mA and 2 mA collector currents
• Low noise performance with a typical noise figure of 1 dB
• Compact SC-70 surface-mount package

Single Bipolar Transistors Applications

• Audio frequency general-purpose amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging details such as reel size or tape configuration. Ensure compliance with applicable environmental directives like RoHS before procurement. Review the Toshiba Semiconductor Reliability Handbook for derating concepts and handling precautions to maintain product reliability under intended operating conditions.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring low-noise amplification in the audio frequency range. Consider the 150 mA collector current limit and 100 mW power dissipation rating when designing thermal management solutions. Verify that the required DC current gain falls within the specified 120 to 400 range for the target operating point.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba NPN epitaxial transistor family utilizing the PCT process technology. It serves as a discrete semiconductor solution for signal amplification tasks where low noise and good linearity are critical. The device complements other general-purpose transistors in the manufacturer's portfolio for consumer electronics and audio equipment.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba sales representatives for potential alternatives if this specific model is unavailable.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage for the TTC4116FU?

The absolute maximum rating for the collector-base voltage (VCBO) is 60 V.

Does the TTC4116FU support operation at elevated temperatures?

Yes, the device supports a junction temperature (Tj) up to 150 °C and a storage temperature range from -55 to 150 °C.

What is the typical noise figure specification?

The typical noise figure (NF) is 1 dB, measured at VCE = 6 V, IC = 0.1 mA, f = 1 kHz, and Rg = 10 kΩ.