TW060Z120C,S1F

$18.49

Description：G3 1200V SIC-MOSFET TO-247-4L 6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:38dab94d5649 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

TW060Z120C,S1F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is G3 1200V SIC-MOSFET TO-247-4L 6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TW060Z120C,S1F

Description：G3 1200V SIC-MOSFET TO-247-4L 6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：82mOhm @ 18A, 18V
Vgs(th) (Max) @ Id：5V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 18 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：1530 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：170W (Tc)
Operating Temperature：175°C
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L(X)
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for TW060Z120C,S1F

TW060Z120C,S1F

Single FETs, MOSFETs Overview

The TW060Z120C,S1F is a third-generation silicon carbide (SiC) N-channel MOSFET manufactured by Toshiba. It features an integrated SiC Schottky barrier diode and operates with a drain-source voltage of 1200 V. The device exhibits a typical on-resistance of 60 mΩ at 18 V gate drive. It supports continuous drain currents of 36 A at 25°C and up to 87 A pulsed. The component utilizes a TO-247-4L(X) through-hole package, enabling efficient thermal management for high-power applications.

Single FETs, MOSFETs Feature Summary

Third-generation chip design incorporating a built-in SiC Schottky barrier diode
High breakdown voltage capability of 1200 V
Low forward voltage characteristic for the integrated body diode
Enhanced threshold voltage range to reduce susceptibility to malfunction

Single FETs, MOSFETs Applications

Switching Voltage Regulators

Single FETs, MOSFETs Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate specific environmental compliance variations. Confirm that the TO-247-4L(X) package pinout matches the application schematic, specifically ensuring Source 2 is used for gate return signals while Source 1 handles main current flow to maintain proper device operation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage switching with low conduction losses. Ensure the gate driver provides the recommended 18 V turn-on voltage. Account for the thermal resistance characteristics when designing heatsinking, as the maximum channel temperature rating is 175 °C. Verify that the application does not fall under unintended use categories such as aerospace or nuclear facilities.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's third-generation Silicon Carbide MOSFET lineup. It is designed to replace previous generation devices in high-efficiency power conversion systems. The TO-247-4L(X) package is standard for high-current through-hole mounting, facilitating integration into industrial and automotive-grade power modules where robust thermal performance is required.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for other TW-series SiC MOSFETs from Toshiba with matching 1200 V ratings and similar RDS(ON) values. Verify pin compatibility for the TO-247-4L(X) package before substitution.