ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
UF3C065080K3S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 650V 31A TO247-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for UF3C065080K3S
- Description：MOSFET N-CH 650V 31A TO247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：-
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：12V
- Rds On (Max) @ Id, Vgs：100mOhm @ 20A, 12V
- Vgs(th) (Max) @ Id：6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：51 nC @ 15 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：190W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for UF3C065080K3S
Single FETs, MOSFETs Overview
The UF3C065080K3S is a silicon carbide (SiC) MOSFET manufactured by onsemi, belonging to the UJ3C series. It features an N-channel configuration housed in a TO-247-3 package with through-hole mounting. Key electrical parameters include a drain-source breakdown voltage of 650 V and a continuous drain current of 31 A at 25°C. The device exhibits a maximum on-resistance of 100 mOhms and a gate charge of 51 nC. It supports a gate-source voltage range of -25 V to +25 V and operates within a temperature range of -55°C to +175°C. The component is AEC-Q101 qualified for automotive applications.
Single FETs, MOSFETs Feature Summary
- Utilizes silicon carbide technology for enhanced thermal performance and high-temperature operation up to 175°C.
- Features low on-resistance characteristics to minimize conduction losses in power switching applications.
- Includes integrated body diode with optimized reverse recovery behavior suitable for hard-switching environments.
- AEC-Q101 qualified for reliability in demanding automotive electronic systems.
Single FETs, MOSFETs Applications
- Automotive DC-DC converters
- On-board chargers for electric vehicles
- Traction inverters
- Industrial motor drives
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix K3S corresponds to the TO-247-3 package variant when sourcing. Confirm AEC-Q101 qualification status is required for the intended automotive application. Ensure thermal management solutions support the specified power dissipation limits. Check for any recent lifecycle notices regarding obsolescence or pinout changes before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust SiC performance in automotive environments. Compare the 100 mOhm on-resistance against system efficiency targets. Consider the 31 A current rating relative to peak load requirements. Evaluate the TO-247-3 package suitability for the available PCB space and thermal constraints compared to surface-mount alternatives.
Single FETs, MOSFETs Part Context
This part belongs to onsemi's UJ3C family of third-generation silicon carbide MOSFETs. The series focuses on improving figure-of-merit metrics for power conversion. The UJ3C line offers various voltage ratings and packages to address diverse power electronics needs. This specific model provides a balance of voltage handling and current capacity for mid-power applications.
Single FETs, MOSFETs Replacement Considerations
Direct replacements may include other onsemi UJ3C series devices with similar Rds(on) and voltage ratings. Verify pin compatibility and thermal characteristics when substituting with components from different manufacturers. Ensure the alternative meets the same AEC-Q101 standards if used in automotive contexts.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
