UF3N120007K4S

$37.92

Description：JFET N-CH 1200V 120A TO247-4
Series：-

SKU:97c6a00b5550 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 1200V 120A TO247-4
Series：-
Mfr：onsemi
Package：Box
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：1200 V
Drain to Source Voltage (Vdss)：1.2 kV
Current - Drain (Idss) @ Vds (Vgs=0)：300 µA @ 1.2 kV
Current Drain (Id) - Max：120 A
Voltage - Cutoff (VGS off) @ Id：-
Input Capacitance (Ciss) (Max) @ Vds：8110pF @ 800V
Resistance - RDS(On)：11 mOhms
Power - Max：789 W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-4
Supplier Device Package：TO-247-4
Grade：Automotive
Qualification：-

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UF3N120007K4S

Overview

The UF3N120007K4S is a Gen 3 Normally-On Silicon Carbide (SiC) JFET transistor rated for 1200 V drain-source voltage. It features an ultra-low on-resistance of 7.1 mΩ at VGS = 2 V and TJ = 25°C, with a maximum junction-to-case thermal resistance of 0.19 °C/W. The device operates up to 175°C and supports high pulse currents within its safe operating area.

Feature Summary

Ultra-low on-resistance in a TO247-4 package
Robust technology for high-energy switching
Silver-sintered die attach for excellent thermal performance

Applications

Solid state circuit breakers
Solid state relays
Battery disconnects
Surge protection
Inrush current control

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct assembly location, year, work week, and lot identification codes match project requirements. Confirm that the TO247-4 package dimensions align with the designated PCB footprint and thermal management strategy before finalizing procurement orders.

Selection Notes

Select this component for applications requiring normally-on operation with minimal conduction losses. Ensure the gate drive circuit accommodates the negative threshold voltage characteristics. Validate thermal design against the specified junction-to-case resistance to maintain reliability under continuous load conditions.

Part Context

This part belongs to onsemi’s EliteSiC Gen 3 family of power N-channel SiC JFET transistors. It utilizes advanced silicon carbide technology to deliver superior thermal handling and switching capabilities compared to traditional silicon devices, specifically targeting high-power density industrial applications.