UG4SC075005L8S

Single FETs, MOSFETs Overview

The UG4SC075005L8S is a Silicon Carbide (SiC) Combo JFET from the EliteSiC series, integrating a normally-on SiC JFET and a low-voltage Si MOSFET into an H-PDSO-F8 package. It provides a normally-off switch configuration with separate gate access for independent control. Key electrical parameters include a 750 V drain-source voltage (VDS), a continuous drain current (ID) of 120 A at TC = 144°C, and a maximum on-resistance (RDS(on)) of 7.2 mΩ at TJ = 25°C. The device features a short circuit withstand time of 5 µs at 400 V and supports junction temperatures up to 175°C.

Single FETs, MOSFETs Feature Summary

• Integrates a normally-on SiC JFET and a low-voltage Si MOSFET in a single package to create a normally-off switch.
• Provides separate gate terminals for the JFET and MOSFET, enabling improved speed control and ease of paralleling multiple devices.
• Features silver-sintered die attach for excellent thermal resistance and high pulse current capability.
• Rated for short circuit operation and designed for robust performance in high-energy switching applications.

Single FETs, MOSFETs Applications

• Solid State / Semiconductor Circuit Breaker
• Solid State / Semiconductor Relay
• Battery Disconnects
• Surge Protection
• Inrush Current Control

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix L8S corresponds to the Tape and Reel shipping format containing 2,000 units per reel. Confirm that the H-PDSO-F8 package dimensions match the mechanical case outline CASE 740AA for PCB layout compatibility. Ensure design specifications account for the separate gate drive requirements for both the JFET and MOSFET terminals to achieve the intended normally-off functionality.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-off switch is required but the conduction losses and ruggedness of a normally-on SiC JFET are preferred. The separate gate controls allow optimization of switching speed and paralleling capabilities. Consider the 175°C maximum junction temperature and 5 µs short circuit rating for protection-heavy environments. Verify thermal management solutions align with the specified thermal resistance values for the target application power dissipation.

Single FETs, MOSFETs Part Context

This device belongs to onsemi’s EliteSiC Combo-FET family, which combines SiC and Si technologies to leverage the low on-resistance of JFETs with the switching control of MOSFETs. The H-PDSO-F8 package is designed for surface-mount applications requiring high power density. This specific part number represents the standard version with Pb-Free and Halogen-Free compliance, suitable for industrial and automotive-grade power conversion systems.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must maintain the H-PDSO-F8 footprint and similar electrical ratings. Check datasheets for alternative Combo-FETs or standalone SiC JFET/MOSFET combinations if pinout compatibility differs. Verify that substitute components support the same short circuit withstand time and thermal characteristics for direct board-level substitution without redesign.