UHB100SC12E1BC3N

Overview

The UHB100SC12E1BC3N is a silicon carbide (SiC) half-bridge power module manufactured by onsemi. It belongs to the UHBxxxSC series and features a 1200 V reverse voltage rating with a forward voltage of approximately 1.4 V. The component utilizes screw mount installation style and is designed for high-efficiency power conversion applications requiring robust thermal performance and low switching losses typical of SiC technology.

Feature Summary

• Utilizes silicon carbide semiconductor technology for enhanced efficiency
• Configured as a half-bridge topology for power inversion
• Designed for high-temperature operation environments

Applications

• Solar inverters
• Uninterruptible power supplies (UPS)
• Energy storage systems
• EV charging power conversion

Procurement Notes

Verify the specific datasheet revision and ordering suffixes to ensure compatibility with required thermal interface materials and gate drive specifications. Confirm mechanical dimensions against the target PCB or busbar layout prior to integration. Cross-reference the part number with official onsemi documentation to validate manufacturing origin and compliance standards.

Selection Notes

Select this module for applications demanding high power density and reduced system size due to higher switching frequencies enabled by SiC technology. Ensure the cooling solution supports the thermal resistance characteristics specified in the datasheet. Evaluate the gate drive requirements to match the module's switching speed and avoid oscillations during operation.

Part Context

This component is part of onsemi's UHBxxxSC series, which focuses on silicon carbide half-bridge modules. The series is engineered to improve efficiency in energy infrastructure applications. The UHB100SC12E1BC3N variant specifically targets high-power conversions where reliability and thermal management are critical for long-term system performance.

Replacement Considerations

Check for direct pin-compatible alternatives within the UHBxxxSC family with different current ratings. Verify if other manufacturers offer equivalent 1200V SiC half-bridge modules with similar thermal and electrical characteristics. Ensure any substitute matches the package outline and mounting hole configuration.