UJ3N120035K3S

$25.59

Description：JFET N-CH 1200V 63A TO247-3
Series：-

SKU:603700428d01 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 1200V 63A TO247-3
Series：-
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：1200 V
Drain to Source Voltage (Vdss)：1200 V
Current - Drain (Idss) @ Vds (Vgs=0)：-
Current Drain (Id) - Max：63 A
Voltage - Cutoff (VGS off) @ Id：-
Input Capacitance (Ciss) (Max) @ Vds：2145pF @ 100V
Resistance - RDS(On)：45 mOhms
Power - Max：429 W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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UJ3N120035K3S

Overview

The UJ3N120035K3S is a Silicon Carbide (SiC) JFET transistor manufactured by onsemi, housed in a TO-247-3 package. It features an N-channel configuration with a drain-source voltage rating of 1200 V and a maximum operating temperature of 175 °C. The device exhibits a typical on-resistance of 35 mΩ at VGS = 0 V and supports a continuous drain current of 63 A at 25 °C case temperature. Key electrical parameters include a gate-source breakdown voltage of -20 V to +3 V DC, a total gate charge of 235 nC, and a power dissipation capacity of 429 W.

Feature Summary

Normally-on operation with low on-resistance at zero gate bias, suitable for passive current protection circuits without active control.
Ultra-low on-resistance and gate charge characteristics enabling reduced conduction and switching losses.
Extremely fast switching performance that remains independent of junction temperature variations.
Low intrinsic capacitance values contributing to efficient high-frequency operation.

Applications

Over-current protection circuits
DC-AC inverters
Switch-mode power supplies
Power factor correction modules
Motor drives

Procurement Notes

Verify the specific ordering suffix K3S against the manufacturer's official documentation to confirm the exact packaging format and compliance status. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee component authenticity and traceability. Cross-reference the datasheet revision date with the delivered product marking to ensure consistency with the latest technical specifications.

Selection Notes

Select this component for designs requiring normally-on SiC JFET functionality with high thermal stability up to 175 °C. Consider the 35 mΩ on-resistance for applications prioritizing low conduction loss. Evaluate the need for cascode configurations if normally-off behavior is required, as this device operates as a depletion-mode transistor. Verify that the gate drive circuitry accommodates the specified DC gate-source voltage limits.

Part Context

This part belongs to the EliteSiC G3 series of normally-on JFET transistors from onsemi. It represents a generation of silicon carbide devices designed to offer superior performance compared to previous iterations. The TO-247-3 package provides a robust mechanical solution for through-hole mounting in high-power electronic systems.