ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET N-CH 1.2KV 34A TO247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：1200 V
- Drain to Source Voltage (Vdss)：1200 V
- Current - Drain (Idss) @ Vds (Vgs=0)：5 µA @ 1200 V
- Current Drain (Id) - Max：34 A
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：1008pF @ 100V
- Resistance - RDS(On)：55 mOhms
- Power - Max：254 W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Download product information
Overview
The UJ3N120065K3S is a silicon carbide (SiC) JFET manufactured by onsemi, designed for high-power applications. It features an N-channel configuration in a TO-247-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 1.2 kV and a continuous drain current (Id) of 34 A. The device exhibits a maximum on-resistance (Rds(on)) of 90 mΩ at specified conditions. It supports a power dissipation (Pd) of 254 W and operates within a junction temperature range of -55°C to +175°C. The component is AEC-Q101 qualified.
Feature Summary
- Utilizes silicon carbide technology for enhanced thermal performance and high-voltage capability.
- Provides robust switching characteristics with low on-resistance for efficient power handling.
- Engineered for automotive reliability with AEC-Q101 qualification.
Applications
- Automotive power electronics systems
- High-efficiency DC-DC converters
- Industrial motor drives
Procurement Notes
Verify the specific ordering suffix K3S to confirm the tube packaging format and lead time requirements directly with the manufacturer or authorized distributors. Ensure that the procurement channel provides valid traceability documentation consistent with AEC-Q101 automotive standards. Confirm that the received components match the exact part number to avoid compatibility issues in high-voltage circuit designs.
Selection Notes
Select this component when designing circuits requiring high voltage blocking capability combined with low conduction losses. The TO-247-3 package facilitates effective heat dissipation for high-power density applications. Consider the 1.2 kV rating for safety margins in automotive and industrial environments. Evaluate the thermal resistance characteristics against the system's cooling strategy to maintain operation within the specified temperature limits.
Part Context
This device belongs to the UJ3N series of silicon carbide JFETs from onsemi. These components are engineered to replace traditional silicon MOSFETs in high-frequency and high-temperature applications. The series offers improved efficiency and reduced system size due to superior material properties of silicon carbide compared to conventional silicon technologies.
Replacement Considerations
Direct pin-to-pin replacements may be limited. Verify compatibility with existing gate drive circuits, as JFETs operate differently from enhancement-mode MOSFETs. Check if alternative SiC JFETs from other manufacturers meet the same Vds, Id, and Rds(on) specifications while maintaining the required package type and thermal performance.
