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UJ4C075060K4S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is SICFET N-CH 750V 28A TO247-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for UJ4C075060K4S
- Description：SICFET N-CH 750V 28A TO247-4
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss)：750 V
- Current - Continuous Drain (Id) @ 25°C：28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：74mOhm @ 20A, 12V
- Vgs(th) (Max) @ Id：6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：37.8 nC @ 15 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1422 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：155W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
Single FETs, MOSFETs datasheet and documents for UJ4C075060K4S
Single FETs, MOSFETs Overview
The UJ4C075060K4S is a Gen 4 Silicon Carbide (SiC) Cascode FET manufactured by onsemi. It features a 750V drain-source voltage and a typical on-resistance of 58 mOhm at 25°C. The device utilizes a cascode configuration combining a normally-on SiC JFET with a Si MOSFET to create a normally-off switch. Key electrical parameters include a maximum continuous drain current of 28A, a gate charge of 37.8 nC, and a threshold voltage of 4.8V. It operates within a junction temperature range of -55°C to 175°C and is housed in a TO-247-3L package.
Single FETs, MOSFETs Feature Summary
- Cascode architecture providing normally-off operation with standard gate drive compatibility
- Ultra-low gate charge for reduced switching losses
- High thermal stability supporting operation up to 175°C
- Excellent reverse recovery characteristics for inductive load switching
Single FETs, MOSFETs Applications
- Switching inductive loads
- Applications requiring standard gate drive signals
- Direct replacement for Si IGBTs or Super Junction devices
- Direct replacement for SiC MOSFETs with minimal redesign
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix K4S against official datasheets to confirm pinout and packaging details. Ensure the application design accounts for the 750V rating and 28A current limit. Confirm RoHS compliance status through manufacturer documentation before integration into regulated products.
Single FETs, MOSFETs Selection Notes
Select this component when standard silicon gate drivers are required for high-voltage applications. The cascode design simplifies driving requirements compared to discrete SiC MOSFETs. Consider the 58 mOhm resistance for conduction loss calculations and the low gate charge for efficiency optimization in high-frequency switching scenarios.
Single FETs, MOSFETs Part Context
This part belongs to onsemi's Gen 4 Silicon Carbide FET family. It represents an evolution in wide-bandgap technology, offering improved performance over previous generations. The UJ4C series specifically targets applications needing robust, high-voltage switching capabilities with simplified drive electronics.
Single FETs, MOSFETs Replacement Considerations
Official substitutes within the UJ4C0750xxK4S series may be available depending on specific Rds(on) and current requirements. Verify pin compatibility and thermal characteristics when considering alternatives from other manufacturers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
