RF Diode UM4010SM product image

UM4010SM

  • Description:RF DIODE PIN 100V 20W
  • Series:-

SKU:0203804bec1b Category: Brand:

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UM4010SM is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE PIN 100V 20W. Review the specifications below when checking this part for your BOM.

RF Diode specifications for UM4010SM

  • Description:RF DIODE PIN 100V 20W
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):100V
  • Current - Max:-
  • Capacitance @ Vr, F:3pF @ 100V, 1MHz
  • Resistance @ If, F:500mOhm @ 100mA, 100MHz
  • Power Dissipation (Max):20 W
  • Operating Temperature:-
  • Package / Case:SQ-MELF
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for UM4010SM

UM4010SM

RF Diode Overview

The UM4010SM is a high-power silicon PIN diode from the UM4000 series, manufactured by Microchip Technology. It features a hermetic surface-mount (SM) package with an end cap thermal path. The device supports a reverse voltage rating of 1000 V at 10 uA leakage current. Key electrical parameters include a maximum series resistance of 0.5 Ω at 100 MHz and a typical capacitance of 3 pF at 100 V reverse bias. Power dissipation reaches 20 W at 25°C end cap temperature, with a thermal resistance of 7 °C/W. Carrier lifetime exceeds 5 µs, enabling control of high RF levels with low bias currents.

RF Diode Feature Summary

  • High charge storage and long carrier lifetime allow high RF power control with relatively low bias current.
  • Peak RF voltages can be handled well in excess of applied reverse bias voltage.
  • Non-cavity design with thermally matched configuration for reliable performance.
  • Low conductance and low capacitance at zero bias voltage.

RF Diode Applications

  • Low distortion switches and attenuators in HF through S band frequencies.
  • High power UHF phase shifters and megawatt peak-power duplexers.
  • Antenna selectors and couplers where inductance and capacitance elements are switched in filter or cavity networks.

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package style and finish specifications. Confirm RoHS compliance status, as standard UM4000 series devices typically utilize Sn/Pb finishes unless designated with the UMX prefix. Consult the latest datasheet for any product change notifications or manufacturing updates prior to finalizing procurement requirements.

RF Diode Selection Notes

Select the UM4010SM when a 1000 V reverse voltage rating is required for high-power RF applications. Ensure the system design accommodates the SM package footprint and thermal management needs, specifically the 7 °C/W thermal resistance to the end cap. Compare against the UM4900 series if higher power dissipation ratings are necessary, noting that both series share equivalent electrical characteristics but differ in thermal paths.

RF Diode Part Context

This component belongs to the UM4000/UM4900 family of high-power PIN diodes designed for microwave and RF applications. The UM4000 series is electrically equivalent to the UM4900 series but generally offers lower power ratings due to differences in the thermal path between the chip and the package. The UM4010 variant specifically denotes the 1000 V breakdown voltage within this lineup.

RF Diode Replacement Considerations

The UMX4010SM is the RoHS-compliant version of this component, featuring a matte tin finish instead of the standard Sn/Pb finish. Verify that the pinout and mechanical dimensions remain identical before substitution.

UM4010SMUM4010SM

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