UM5K1NTR

Overview

The UM5K1NTR is a dual N-channel small-signal MOSFET manufactured by ROHM Semiconductor. It integrates two 2SK3018 transistors within a single UMT5 (SC-88A) surface-mount package. The device supports a drain-source voltage of 30V and a continuous drain current of 100mA, with a peak pulsed current rating of 200mA. Total power dissipation is rated at 150mW at 25°C case temperature. Key electrical parameters include a gate threshold voltage range of 0.8V to 5V and low on-resistance values of 1.5Ω at VGS=2.5V and 1.0Ω at VGS=4V. Switching characteristics feature a turn-on delay time of 15ns and a rise time of 35ns under standard test conditions.

Feature Summary

• Integrates two independent N-channel MOSFETs in a compact UMT5 package to reduce mounting area and cost.
• Optimized for low-voltage drive applications with effective operation at 2.5V gate-source voltage.
• Includes built-in protection diodes between the gate and source terminals to mitigate static electricity damage.

Applications

• Interfacing circuits requiring signal switching
• Switching applications operating at 30V and 100mA
• Portable electronic equipment utilizing low-voltage drive architectures

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the ordering suffix 'NTR' corresponds to the specified taping packaging format containing 3000 units per reel. Ensure compliance with RoHS directives and verify that the application environment remains within the absolute maximum ratings defined in the datasheet.

Selection Notes

Select this component when space constraints require dual transistor integration in an SC-88A footprint. Consider the specific RDS(on) requirements at 2.5V versus 4V drive voltages based on the system logic levels. Evaluate thermal management needs as total power dissipation is limited to 150mW without external heatsinking.

Part Context

This part belongs to the UM5K1 series of small switching transistors designed for portable electronics. It serves as a dual-transistor alternative to discrete components, simplifying circuit design for interfacing and switching tasks. The device utilizes silicon N-channel technology and is intended for general-purpose electronic equipment rather than high-reliability automotive or aerospace systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult manufacturer resources for equivalent devices if sourcing constraints exist.

FAQ

What is the function of the internal diodes in the UM5K1N?

Protection diodes are built-in between the gate and source of each transistor to protect against static electricity during use.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage decreases as the channel temperature increases, as illustrated in the typical transfer characteristics curves.

What are the absolute maximum ratings for drain-source voltage?

The absolute maximum continuous drain-source voltage (VDSS) is 30V, while the gate-source voltage (VGSS) limit is ±20V.