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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 0.2A UMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：200mA
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：30pF @ 10V
- Power - Max：150mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：UMT6
- Grade：-
- Qualification：-
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Overview
The UM6J1NTN is a dual P-channel MOSFET manufactured by ROHM Semiconductor, housed in a compact SOT-363 (UMT6) surface-mount package. It features a drain-source voltage of -30V and a continuous drain current of -200mA. The device is optimized for low-voltage drive applications with a typical on-resistance of 1.6 Ohms at VGS = 4V. Power dissipation is rated at 150mW, supporting operation within a temperature range of -55°C to +150°C.
Feature Summary
- Dual P-channel configuration integrated into a single micro-package
- Optimized for 4V drive voltage applications
- Low on-resistance characteristics for efficient switching
- Surface-mount design suitable for space-constrained PCB layouts
Applications
- Battery protection circuits
- Load switch applications
- Power management modules
- Portable electronic devices
Procurement Notes
Verify the specific suffix 'TN' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SOT-363 footprint designs. Cross-reference RoHS compliance status directly with the latest product documentation before procurement.
Selection Notes
Select this component for designs requiring dual P-channel switching in minimal board space. Evaluate the 1.6 Ohm on-resistance at 4V gate drive against system power loss requirements. Confirm that the 150mW power dissipation rating aligns with thermal constraints in the target application environment.
Part Context
This part belongs to ROHM's lineup of small-signal MOSFETs designed for portable electronics. The UMT6 package provides a compact solution for signal and power switching tasks where board real estate is limited. It serves as a complementary device in mixed-signal circuits requiring efficient low-voltage control.
Replacement Considerations
The UM6K31NTN is documented as a same-pinout replacement option. Verify electrical parameter differences, specifically the higher voltage rating and lower on-resistance of the substitute, to ensure circuit compatibility.
