UM7104F

RF Diode Overview

The UM7104F is a silicon PIN diode from the UM7100 series, manufactured by Microchip Technology. It features a hermetic MELF package and a single configuration. Key electrical parameters include a reverse voltage (Vr) of 400 V, maximum diode capacitance of 1.2 pF, and maximum series resistance of 600 mOhms at mid-frequency maximum. The device has a carrier lifetime of 2 us and a reverse current (Ir) of 10 uA. It operates within a temperature range of -65 C to +175 C.

RF Diode Feature Summary

• Hermetic sealing for environmental protection
• High power handling capability
• Low capacitance design

RF Diode Applications

• RF switch circuits
• Microwave attenuator circuits

RF Diode Procurement Notes

Verify part authenticity through authorized Microchip distributors or direct channels. Confirm the specific ordering suffix matches the required package and tolerance specifications. Request official datasheets and material compliance documentation prior to procurement to ensure alignment with project requirements.

RF Diode Selection Notes

Select the UM7104F when a 400 V reverse voltage rating is required alongside low capacitance characteristics. Compare against the UM7102F (200 V), UM7106F (600 V), and UM7108F (800 V) variants to match the specific circuit voltage constraints. Ensure the hermetic MELF package suits the thermal and environmental conditions of the application.

RF Diode Part Context

The UM7104F belongs to the UM7100 series of high power PIN diodes. This series offers moderately high power handling with low series resistance and capacitance. The specific performance differences across the series result from varying I-region thicknesses, allowing selection based on voltage and speed requirements.

RF Diode Replacement Considerations

Consider UM7102F, UM7106F, or UM7108F as alternative voltage ratings within the same series. Verify pinout compatibility and thermal characteristics before substitution.