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The UM9601 is a PIN diode developed for shunt mount applications in microstrip circuits, characterized for frequencies from UHF to 4 GHz. It features a fused-in-glass hermetic package with symmetrical metallurgical bonds to minimize parasitic inductance and capacitance. The device is designed for low inductance switching and high power handling. Electrical specifications at 25°C include a series resistance of 0.4 Ω (typical) at 100 mA forward current, parallel resistance of 100 kΩ (minimum) at 100 V reverse bias, and total capacitance of 1.2 pF (maximum). Peak power ratings reach 25 kW for single pulses.
Verify the specific revision status against Microsemi's official documentation before implementation. Confirm that the RoHS compliant packaging variant, designated as UMX9601, meets environmental compliance requirements if applicable. Ensure the procurement channel sources genuine components directly from authorized distributors or the manufacturer to maintain performance integrity.
Select the UM9601 for applications requiring low insertion loss and high isolation in shunt configurations within microstrip circuits. This component is recommended for quarter-wave antenna switches and high isolation switches operating up to 2 GHz at low drive levels. Consider the UM9603 variant if mounting to a backing plate is required instead of the ground plane.
The UM9601 belongs to the UM9601-UM9608 series of discrete PIN diodes manufactured by Microsemi. These devices are specifically engineered for microwave applications where standard passivated chips face handling difficulties. The series provides superior power handling compared to bare chips while maintaining excellent electrical characteristics through specialized assembly hardware compatible with microstrip geometries.
The UMX9601 serves as the RoHS compliant alternative to the UM9601. Verify mechanical footprint compatibility when substituting. No other direct functional replacements are documented in the provided datasheet.