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Product Detailed Parameters
- Description：TRANS 2PNP DUAL 12V 500MA UMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：500mA
- Voltage - Collector Emitter Breakdown (Max)：12V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：270 @ 10mA, 2V
- Power - Max：150mW
- Frequency - Transition：260MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：UMT6
- Grade：-
- Qualification：-
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Overview
The UMT18NTR is a dual PNP bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It features a low collector-emitter saturation voltage of 250 mV at -10 mA and -2 V, with a maximum DC current gain (hFE) of 680 under the same conditions. The device supports a continuous collector current of -500 mA and operates with a collector-emitter breakdown voltage (VCEO) of -12 V. Additional electrical ratings include a collector-base voltage (VCBO) of 15 V, an emitter-base voltage (VEBO) of 6 V, and a power dissipation (Pd) of 150 mW. The transition frequency (fT) is specified at 260 MHz, and the component is housed in a SOT-363-6 surface-mount package.
Feature Summary
- Dual PNP configuration within a compact SOT-363-6 surface-mount package
- Low collector-emitter saturation voltage for efficient switching performance
- High DC current gain capability up to 680 at standard test conditions
Applications
- General-purpose signal switching circuits
- Low-voltage logic interface applications
- Battery-powered portable devices requiring small form factors
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging format and tape-and-reel specifications. Confirm RoHS compliance status through the latest product documentation before finalizing procurement orders.
Selection Notes
Select this component when a dual PNP configuration is required in a minimal footprint. Ensure the design accounts for the 150 mW power dissipation limit and the -12 V collector-emitter voltage rating to maintain safe operating area boundaries during operation.
Part Context
This part belongs to ROHM's UMT series of complex transistors designed for space-constrained electronics. The UMT18NTR specifically integrates two PNP transistors into a single SOT-363 package, offering a compact alternative to discrete components while maintaining high current gain characteristics suitable for modern consumer electronics.
Replacement Considerations
Cross-reference with other dual PNP transistors in the SOT-363 package from ROHM or other manufacturers. Verify pinout compatibility and electrical parameter equivalence, particularly regarding VCEO, IC max, and hFE ranges, before substituting.
