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The UMT1N-TP is a dual PNP bipolar junction transistor (BJT) array manufactured by Micro Commercial Components. It is housed in a surface-mount SOT-363 package and utilizes silicon technology. The device supports a maximum DC collector current of -150 mA and a power dissipation of 150 mW. Key voltage ratings include a collector-emitter breakdown voltage (VCEO) of -50 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 6 V. The transition frequency (fT) is specified at 140 MHz, with a collector-emitter saturation voltage of 500 mV. It operates within a temperature range of -55°C to +150°C.
Verify the specific datasheet version and RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Confirm that the SOT-363 package dimensions and pinout align with the target PCB footprint. Ensure thermal management requirements are met given the 150 mW power dissipation limit. Check for any recent Product Change Notifications (PCNs) regarding assembly sites or materials.
Select the UMT1N-TP when a dual PNP configuration is required in a small form factor. Compare the 140 MHz transition frequency against application speed needs. Evaluate the -50 V VCEO rating against circuit supply voltages. Consider the 150 mA continuous current limit for load requirements. Verify compatibility with SMD/SMT assembly processes.
The UMT1N-TP belongs to the UMT1N series of dual bipolar transistors from Micro Commercial Components. This series typically offers matched pairs for balanced performance in differential or push-pull configurations. The component is part of MCC's broader portfolio of discrete semiconductors designed for consumer and industrial electronics.
Potential substitutes include other dual PNP transistors in SOT-363 packages with similar electrical ratings. Verify pinout compatibility and parameter equivalence for VCEO, IC, and fT before substitution.