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The UMT2NTR is a dual PNP bipolar junction transistor array manufactured by ROHM Semiconductor. It integrates two independent PNP transistors within a compact UMT6 surface-mount package, which corresponds to the SOT-363 and SC-88 form factors. The device supports a maximum collector current of 150mA and withstands a collector-emitter breakdown voltage of 50V. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 1mA and 6V, a transition frequency of 180MHz, and a maximum power dissipation of 150mW. The component operates within a junction temperature range up to 150°C.
Verify the specific ordering suffix and tape/reel specifications directly with authorized distributors or the manufacturer before procurement. Confirm that the UMT6 package dimensions align with your PCB footprint requirements. Ensure compliance with RoHS directives and check for any end-of-life notices or design-in restrictions associated with this specific batch code.
Select the UMT2NTR when a dual PNP configuration is required in a minimal footprint. Compare its 150mA current rating and 180MHz frequency against alternatives if higher speed or current capacity is needed. Consider the 150mW power dissipation limit for thermal management in dense assemblies. Verify compatibility with existing NPN counterparts like the UMX2NTR if complementary pairs are necessary.
The UMT2NTR belongs to ROHM's series of small-signal bipolar transistor arrays designed for high-density electronics. It shares the UMT6 package family with other dual transistor variants, such as the UMX2NTR (dual NPN) and UMD2NTR (mixed NPN/PNP). This standardization simplifies inventory management and PCB layout processes for manufacturers producing multi-transistor logic or amplification stages.
Potential substitutes include the UMX2NTR for dual NPN applications or the UMD2NTR for mixed polarity needs. Verify pinout compatibility and electrical parameters against the original design requirements before substitution.