UMWIRFR5505TR

$1.03

Description：MOSFET P-CH 55V 18A DPAK
Series：*
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6dc02e4fd4f0 Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

UMWIRFR5505TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET P-CH 55V 18A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for UMWIRFR5505TR

Description：MOSFET P-CH 55V 18A DPAK
Series：*
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for UMWIRFR5505TR

UMWIRFR5505TR

Single FETs, MOSFETs Overview

UMW IRFR5505TR is a P-channel enhancement mode MOSFET utilizing advanced trench technology. It features a drain-source voltage of -60V and a continuous drain current of -10A at 25°C case temperature. The device offers an on-resistance below 110 mΩ at VGS=10V and operates with gate voltages as low as 4.5V. Key electrical parameters include a total gate charge of 9.86 nC, a single pulse avalanche energy of 25 mJ, and a maximum junction temperature of 150°C. It is housed in a TO-252 package.

Single FETs, MOSFETs Feature Summary

Advanced trench technology provides excellent on-resistance and low gate charge for efficient switching.
Capable of operation with gate voltages as low as 4.5V to support logic-level driving.
Fully rated for unclamped inductive switching with guaranteed avalanche energy.

Single FETs, MOSFETs Applications

Battery protection circuits
Load switch applications
Uninterruptible power supply systems

Single FETs, MOSFETs Procurement Notes

Verify the component against the official UTD Semiconductor datasheet to confirm specifications such as the -60V rating and TO-252 packaging. Ensure that the ordering code matches the tape and reel delivery mode specified by the manufacturer. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET with a -60V breakdown voltage is required for battery or load switching applications. Consider its low gate charge and 4.5V drive capability for designs prioritizing efficiency and simplified driver requirements. Evaluate the thermal resistance and power dissipation limits relative to the specific operating environment and heat sinking conditions.

Single FETs, MOSFETs Part Context

The IRFR5505TR belongs to the family of P-channel enhancement mode MOSFETs manufactured by UMW (UTD Semiconductor). It is designed using trench technology to achieve low on-resistance and fast switching speeds. The device is intended for surface-mount assembly in the TO-252 package, providing a compact solution for power management tasks in consumer electronics and industrial equipment.