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The UMZ1N-TP is a dual digital transistor from Micro Commercial Components, integrating NPN and PNP bipolar junction transistors in a single SOT-363-6 surface-mount package. It supports a maximum collector current of 150 mA and offers a VCEO rating of 50 V with a VCBO of 60 V. The device features an emitter-base voltage (VEBO) range of 6 V to 7 V and a power dissipation capacity of 150 mW. Operating temperatures span from -55°C to +150°C. DC current gain (hFE) ranges from a minimum of 120 to a maximum of 560, while the transition frequency (fT) reaches 140 MHz or 180 MHz depending on the specific variant.
Verify the specific suffix or variant code to confirm exact electrical parameters, as the UMZ1N series includes options with differing gain and frequency specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the SOT-363-6 footprint matches the PCB layout constraints. Cross-reference the datasheet for thermal resistance values if operating near the maximum temperature limit.
Select this component when a compact solution requires both NPN and PNP switching capabilities within a single package. The integrated digital transistor structure reduces board space compared to discrete components. Consider the hFE range and fT specifications to ensure compatibility with the target switching speed and amplification requirements. Verify that the 50 V VCEO rating exceeds the maximum circuit voltage to prevent breakdown.
The UMZ1N-TP belongs to the UMZ1N series of dual digital transistors manufactured by Micro Commercial Components. This series is designed to replace multiple discrete components, offering a simplified alternative for digital logic interfaces. The product utilizes silicon technology and is housed in a standard SMD/SMT package suitable for automated assembly processes.
Public confirmed substitute part numbers are not available in the provided data.