UMZ1NT1

UMZ1NT1

$0.03
  • Description:TRANS NPN/PNP 50V 0.2A SOT363
  • Series:-

SKU:b219fd3c3a95 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 50V 0.2A SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
  • Power - Max:250mW
  • Frequency - Transition:114MHz, 142MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

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UMZ1NT1

Overview

The UMZ1NT1 is a complementary dual general-purpose amplifier transistor containing one NPN and one PNP bipolar junction transistor in an SC-88 surface-mount package. It features a collector-emitter breakdown voltage of 50 Vdc, a continuous collector current rating of 200 mAdc, and a DC current gain ranging from 200 to 400 at 2.0 mAdc. The device operates within a temperature range of -55°C to +150°C and offers a typical transition frequency of 114 MHz for the NPN and 142 MHz for the PNP transistor.

Feature Summary

  • Complementary dual configuration integrating NPN and PNP transistors in a single compact surface-mount package
  • High voltage and high current capability with 50 V collector-emitter breakdown and 200 mA continuous current rating
  • Elevated DC current gain spanning 200 to 400 under standard test conditions

Applications

  • General-purpose amplification circuits
  • Switching applications requiring complementary logic levels
  • Low-power signal processing stages

Procurement Notes

Verify the specific ordering suffix when sourcing components. The base part number UMZ1NT1 utilizes a T1 suffix indicating a 7-inch reel format. Confirm that the physical reel dimensions align with automated pick-and-place equipment specifications before initiating procurement orders.

Selection Notes

Evaluate the thermal resistance parameters against the expected ambient operating conditions. The device provides distinct dissipation ratings depending on whether one or both junctions are heated simultaneously. Ensure the PCB pad layout matches the specified FR-4 minimum or 1.0 x 1.0 inch pad configurations to achieve optimal heat dissipation.

Part Context

This component belongs to the UMZ1N series of complementary dual transistors manufactured by onsemi. It serves as a surface-mount alternative to through-hole discrete pairs, consolidating two matched transistors into a single SC-88 footprint to reduce board space and simplify assembly processes.

Replacement Considerations

  • UMZ1NT1G

FAQ

What does the 'T1' suffix indicate in the ordering information?

The 'T1' suffix specifies that the device is supplied on a 7-inch tape and reel.

How does the total device dissipation change based on heating conditions?

Total device dissipation increases from 187 mW to 250 mW when both junctions are heated simultaneously compared to only one junction being heated.

What is the ESD protection rating for this component?

The device has an ESD rating of 3A according to the Human Body Model and is rated Class C for the Machine Model.

UMZ1NT1UMZ1NT1
$0.03
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