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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.1A SSMINI6-F2
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：100mA
- Rds On (Max) @ Id, Vgs：12Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：12pF @ 3V
- Power - Max：125mW
- Operating Temperature：125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SSMini6-F2
- Grade：-
- Qualification：-
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Overview
The UP04878G0L is a dual N-channel silicon MOSFET array in an SSMini6-F2 surface-mount package. It supports logic-level gate drive at 2.5 V and incorporates a built-in gate protection diode. Key electrical parameters include a drain-source voltage of 50 V, continuous drain current of 100 mA, and total power dissipation of 125 mW. The device exhibits a maximum on-resistance of 12 Ω at 4 V gate drive and a threshold voltage up to 1.5 V.
Feature Summary
- Dual N-channel configuration for space-saving integration
- Logic-level operation compatible with low-voltage control signals
- Integrated gate protection diode for enhanced reliability
Applications
- Battery-operated power tools
- Load switching circuits
- Motor control applications
Procurement Notes
Verify the specific lifecycle status through official Panasonic Industry channels before procurement. Confirm that the SSMini6-F2 package dimensions align with existing PCB footprints. Ensure design margins accommodate the specified thermal characteristics under expected operating conditions.
Selection Notes
Select this component for designs requiring compact dual-N-channel solutions with low-voltage compatibility. Evaluate the 12 Ω on-resistance against load requirements. Verify that the 50 V breakdown voltage exceeds peak circuit voltages. Consider the integrated gate protection for simplified driver design.
Part Context
This part belongs to the UP04878 series of composite transistors manufactured by Panasonic Industry. It serves as a replacement for discrete configurations using two 2SK3539 transistors. The component is designed for general electronic equipment and standard applications within specified temperature ranges.
Replacement Considerations
The datasheet identifies the UP04878 as functionally equivalent to two 2SK3539 transistors. Verify pinout compatibility and thermal performance when substituting other dual N-channel MOSFETs in the SSMini6-F2 package.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage (V_GSO) is ±7 V.
Does the UP04878G0L include internal protection features?
Yes, the device incorporates a built-in gate protection diode.
What is the typical forward transfer admittance?
The forward transfer admittance (|Yfs|) typically ranges from 20 to 60 mS at VGS = 4.0 V and ID = 10 mA.
