SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UP0487C is a silicon N-channel MOSFET designed for switching circuits, featuring two independent elements within an SSMini6-F1 package. It incorporates a built-in gate protection diode and supports high-speed switching operations. The device operates with a drain-source voltage of 20V and a continuous drain current of 100mA at 25°C. Key electrical parameters include a maximum gate-source voltage of ±12V, total power dissipation of 125mW, and a channel temperature limit of 125°C. The gate threshold voltage ranges from 0.4V to 1.3V at 50µA. On-resistance varies between 3Ω and 13Ω depending on the gate drive conditions.
Verify component status before procurement as this part may be discontinued or under maintenance. Confirm availability through official Panasonic Industry channels or authorized distributors. Ensure the ordering suffix matches the required packaging format. Validate that the specific revision aligns with current design requirements.
Select based on the 20V drain-source voltage rating and 100mA continuous current capacity. Consider the low gate threshold voltage for logic-level compatibility. Evaluate the thermal performance against the 125mW power dissipation limit. Verify the SSMini6-F1 package dimensions fit the PCB layout constraints.
This component belongs to the UP0487 series of dual N-channel MOSFETs. It serves as a compact solution for applications requiring two separate switching elements. The internal connection separates the transistors, allowing independent control. It replaces older discrete configurations by integrating two functions into a single surface-mount footprint.
The datasheet lists the equivalent part number 2SK3937 x 2. Verify pinout compatibility and absolute maximum ratings when substituting. Ensure the replacement maintains the same SSMini6-F1 package style and electrical characteristics.