UP04979G0L

Description：MOSFET N/P-CH 50V/30V SSMINI6-F2
Series：-

SKU:a615a8e84605 Category: FET, MOSFET Arrays Brand: Panasonic Electronic Components

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 50V/30V SSMINI6-F2
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：50V, 30V
Current - Continuous Drain (Id) @ 25°C：100mA
Rds On (Max) @ Id, Vgs：12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：125mW
Operating Temperature：125°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SSMini6-F2
Grade：-
Qualification：-

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UP04979G0L

Overview

The UP04979G0L is a composite transistor featuring an N-channel MOSFET (Tr1) and a P-channel MOSFET (Tr2) in a single SSMini6-F2 package. Tr1 supports a drain-source voltage of 50V, while Tr2 operates at -30V. Both transistors share a total power dissipation rating of 125mW and a channel temperature limit of 125°C. The device incorporates a built-in gate protection diode and is designed for high-speed switching applications.

Feature Summary

High-speed switching capability with integrated gate protection diodes
Dual-element configuration within a compact surface-mount package
Independent internal separation of N-channel and P-channel transistors

Applications

General electronic equipment
Office equipment
Communications equipment
Measuring instruments
Household appliances

Procurement Notes

Verify the current lifecycle status directly with Panasonic or authorized distributors before design finalization. This component may be subject to maintenance or discontinuation schedules. Confirm that the latest product standards align with specific project requirements prior to procurement.

Selection Notes

Select this component for designs requiring complementary N-channel and P-channel switching in a minimal footprint. Ensure operating conditions remain within the specified absolute maximum ratings for both channels. Consider thermal management constraints due to the 125mW total power dissipation limit in the small SSMini6-F2 package.

Part Context

This part combines the functions of a 2SJ0672 P-channel MOSFET and a 2SK3539G N-channel MOSFET into a unified assembly. It serves as a space-saving alternative for discrete dual-transistor circuits, reducing mounting area and assembly complexity while maintaining independent electrical characteristics for each channel.

Replacement Considerations

Direct functional equivalents include the discrete combination of 2SJ0672 and 2SK3539G. Verify pinout compatibility and package dimensions when substituting with other composite MOSFETs from different manufacturers.

FAQ

What is the function of the built-in gate protection diode?

The built-in gate protection diode safeguards the gate-source junctions from voltage spikes and electrostatic discharge, enhancing reliability during operation.

Are the N-channel and P-channel transistors electrically isolated?

Yes, the datasheet specifies that the two elements are incorporated into one package but are internally separated, allowing for independent control of each transistor.