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Product Detailed Parameters
- Description：TRANS 4NPN DARL 100V 3A 10-SIP
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：4 NPN Darlington (Quad)
- Current - Collector (Ic) (Max)：3A
- Voltage - Collector Emitter Breakdown (Max)：100V
- Vce Saturation (Max) @ Ib, Ic：1.5V @ 1.5mA, 1.5A
- Current - Collector Cutoff (Max)：1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：2000 @ 1.5A, 2V
- Power - Max：3.5W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：10-SIP
- Supplier Device Package：10-SIP
- Grade：-
- Qualification：-
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Overview
The UPA1436AH-AZ is a power bipolar transistor array manufactured by Renesas Electronics Corporation. It contains four NPN Darlington pairs housed in a 10-SIP through-hole package. The device supports a collector current of 3A and a breakdown voltage of 100V, with a total power dissipation rating of 3.5W.
Feature Summary
- Integrates four NPN Darlington transistor pairs into a single component
- Provides high current gain suitable for switching applications
- Designed for through-hole mounting on printed circuit boards
Applications
- Industrial control systems requiring relay or solenoid driving
- Power switching circuits in consumer electronics
- Interface logic level translation and buffering
Procurement Notes
Verify the specific suffix against official Renesas documentation to confirm pinout compatibility and thermal characteristics. Ensure that the 10-SIP package dimensions align with the target PCB footprint. Confirm that the 3A current rating meets the peak load requirements of the intended application without exceeding the 3.5W power dissipation limit under worst-case operating conditions.
Selection Notes
Select this component when a compact solution for multiple low-to-medium power switching tasks is required. The Darlington configuration offers high input impedance, simplifying drive circuitry compared to standard bipolar transistors. Consider the through-hole form factor if mechanical robustness or ease of manual assembly is prioritized over surface area constraints.
Part Context
This part belongs to Renesas' discrete semiconductor portfolio, specifically within the power bipolar transistor category. It serves as a building block for power management and signal switching functions, complementing the company's broader range of integrated circuits and microcontrollers used in industrial and automotive applications.
Replacement Considerations
Consult official Renesas cross-reference lists for verified substitutes. Generic equivalents may differ in pin configuration or thermal performance; verify datasheet specifications before substitution.
