UPA1970TE-T1-AT

Overview

The UPA1970TE-T1-AT is a dual N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage of 20V and a continuous drain current of 2.2A. The device utilizes a SC-95-6 (TMM) surface-mount package with six pins. Key electrical parameters include an on-resistance of 69 mΩ at VGS=4.5V and a typical input capacitance of 160 pF. The component supports an operating temperature range from -55°C to 150°C.

Feature Summary

• Dual N-channel configuration for efficient circuit design
• Low on-resistance for reduced power loss
• Surface-mount packaging for automated assembly

Applications

• Industrial equipment power management
• Consumer electronics power switching
• Charge control switches for lithium-ion batteries

Procurement Notes

Verify the specific suffix 'AT' against the official Renesas datasheet to confirm tape-and-reel packaging and lead-free status. Ensure the ordering part number matches the exact pinout and thermal characteristics required for the target PCB layout. Cross-reference with authorized distributors to validate authenticity and traceability.

Selection Notes

Select this component for low-voltage applications requiring dual channel isolation. The 20V rating suits battery-powered systems. Evaluate the 69 mΩ on-resistance against thermal constraints. The SC-95-6 package requires appropriate footprint design for reliable soldering and heat dissipation in compact consumer devices.

Part Context

This device belongs to Renesas' uPA series of power MOSFETs, designed for low-loss switching applications. The series emphasizes reduced on-resistance through advanced fabrication processes. These transistors are optimized for portable electronics and battery management systems where space and efficiency are critical.

Replacement Considerations

Consult official cross-reference lists for compatible alternatives. Verify that any substitute maintains identical pinout, voltage ratings, and thermal performance specifications.