UPA2350BT1P-E4-A

$0.33

Description：N-CHANNEL POWER MOSFET
Series：*

SKU:84831b61dcc6 Category: FET, MOSFET Arrays Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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UPA2350BT1P-E4-A

Overview

The UPA2350BT1P-E4-A is a dual N-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed as an ecological flip-chip device intended for lithium-ion battery protection circuits. The component utilizes silicon metal-oxide semiconductor technology and operates in the standard quality grade. It features a BGA-266 package style suitable for surface mount applications, with a maximum operating temperature of +85°C and a minimum of -40°C.

Feature Summary

Dual N-channel configuration for efficient circuit management
Flip-chip construction for enhanced thermal performance
Optimized design specifically for lithium-ion battery protection applications

Applications

Lithium-ion battery protection circuits
Battery management systems requiring dual channel control
Portable electronic devices utilizing lithium-ion power sources

Procurement Notes

Verify the specific suffix E4-A against official Renesas documentation to confirm environmental compliance and packaging specifications. Ensure the procurement source provides valid traceability for the Standard quality grade. Confirm that the BGA-266 package dimensions match your PCB footprint requirements before finalizing orders.

Selection Notes

Select this component when a dual N-channel solution is required for battery protection within specified temperature ranges. Consider the flip-chip architecture for thermal management needs. Evaluate the BGA-266 package constraints against available board space. Compare against single-channel alternatives if only one protection path is necessary.

Part Context

This part belongs to the discrete power field-effect transistor category from Renesas Electronics. It serves as a specialized switch within power management subsystems. The dual-element structure allows for coordinated control in protection schemes. It complements other passive and active components in battery safety architectures.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the dual N-channel topology and compatible voltage ratings. Verify package compatibility for direct board integration without redesign.