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The UPA2379T1P-E1-A is a dual N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage of 12V and a continuous drain current rating of 8A. The device exhibits a typical on-resistance of 11.9 milliohms and a typical input capacitance of 1480 picofarads. Designed for surface-mount applications, it utilizes a compact package with four leads. The component supports industrial and consumer use cases, operating within a specified temperature range and adhering to lead-free manufacturing standards.
Verify the specific ordering suffix and package variant when sourcing to ensure compatibility with design requirements. Confirm RoHS compliance status through official manufacturer documentation or authorized distributors. Cross-reference part numbers carefully to avoid confusion with similar series components. Ensure storage and handling procedures meet electrostatic discharge precautions as outlined in the datasheet.
Select this component for low-voltage applications requiring high current capacity in a dual FET arrangement. Evaluate thermal performance based on the specified power dissipation limits under expected operating conditions. Consider the input capacitance values for switching speed requirements in drive circuit designs. Ensure the selected package type aligns with available PCB footprint constraints and assembly capabilities.
This device belongs to Renesas' portfolio of power MOSFETs designed for general-purpose switching applications. It complements other low-voltage FET offerings by providing integrated dual-channel functionality. The product line emphasizes efficiency and compactness for modern electronic devices. Renesas continues to expand its discrete semiconductor solutions for diverse market segments.
Consult official cross-reference lists for verified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure thermal and mechanical specifications match the original design intent.