UPA672CT-T1-AT

UPA672CT-T1-AT

  • Description:MOSFET 2N-CH 60V 0.1A SC88
  • Series:-

SKU:c359b0af8e04 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 0.1A SC88
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual), Schottky
  • FET Feature:Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
  • Rds On (Max) @ Id, Vgs:2.7Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:20pF @ 10V
  • Power - Max:200mW (Ta)
  • Operating Temperature:150°C
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88
  • Grade:-
  • Qualification:-

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UPA672CT-T1-AT

Overview

The UPA672CT-T1-AT is a dual N-channel vertical MOSFET array designed for general-purpose switching applications. It operates directly from a 4.5 V power source and features low on-state resistance, with maximum values of 2.7 Ω at VGS = 10 V and 3.2 Ω at VGS = 4.5 V. The device provides a drain-to-source voltage rating of 60 V and supports continuous DC drain currents up to ±100 mA. Total power dissipation is rated at 200 mW, with a channel temperature limit of 150 °C. Packaged in an SC-88 (6pSSP) format, the -AT suffix indicates pure tin plating and lead-free compliance.

Feature Summary

  • Dual MOSFET circuits integrated into a single package for high-density mounting
  • Direct drive capability from standard 4.5 V logic sources
  • Low on-state resistance optimized for efficient switching performance

Applications

  • General-purpose switching circuits
  • Automated surface mount assembly systems
  • Battery-powered portable devices

Procurement Notes

Verify the ordering suffix carefully when sourcing components. The -AT suffix specifically denotes pure tin plating and lead-free construction, distinguishing it from the -A variant which uses Sn-Bi plating. Confirm that the supplier provides the correct packaging configuration, as this part number is typically supplied in reels of 3000 units within the SC-88 package.

Selection Notes

Select this component for designs requiring dual N-channel isolation within a minimal footprint. Ensure the gate drive voltage meets the minimum threshold for the desired current load, as on-resistance increases significantly below 10 V. Verify thermal management requirements against the 200 mW total dissipation limit, particularly if operating near the upper ambient temperature range.

Part Context

This device belongs to Renesas Electronics' µPA series of small-signal MOSFET arrays. It utilizes the SC-88 package, historically associated with NEC/Renesas mini-mold technologies. The product line focuses on providing multiple transistor functions in compact form factors suitable for space-constrained consumer electronics and industrial control boards.

Replacement Considerations

Check pinout compatibility before substituting. While other dual N-channel MOSFETs exist in SC-88 packages, verify that the replacement matches the 60 V breakdown voltage and current ratings. Ensure the substitute device supports direct 4.5 V logic drive if that specific interface constraint is critical to the design.

UPA672CT-T1-ATUPA672CT-T1-AT

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