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The UPA802T-A is a silicon NPN twin transistor designed for RF applications. It integrates two transistors within a single SOT-363 package, utilizing NE681 die configurations. The device operates with a maximum collector-emitter voltage of 10V and supports a continuous collector current of 100mA. Key electrical characteristics include a typical transition frequency (fT) of 7.0 GHz at 1.0 GHz test frequency and 12.0 GHz at 3.0 GHz test frequency. At 1.0 GHz, it provides a typical noise figure of 1.4 dB and a maximum available gain of 14.0 dB.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact pinout and performance tolerances. Confirm availability status through authorized distribution channels as product lifecycles may change. Ensure compatibility with existing PCB footprints before finalizing procurement decisions.
Select this component when a dual-transistor topology is required for balanced circuit designs or differential signal processing. Compare fT and noise figure specifications against system requirements to ensure adequate gain and signal integrity. Verify that the SOT-363 package dimensions fit within the mechanical constraints of the target application.
This part belongs to CEL's Silicon Bipolar Transistor family, specifically the Twin Transistors category. It shares the NE681 die structure with other variants like the UPA812T. The product line focuses on providing integrated solutions for RF and microwave circuits, reducing board space compared to discrete implementations.
The UPA812T is a confirmed substitute part number sharing identical electrical characteristics and the NE681 die configuration. Verify pin compatibility and thermal performance before substitution.