UPA806T-A

Overview

The UPA806T-A is a twin NPN silicon bipolar transistor designed for RF applications up to 2 GHz. It integrates two NE685 devices in a single SOT-363 package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 6 V, a maximum continuous collector current (IC) of 30 mA, and a typical transition frequency (fT) of 12 GHz at 2 GHz test frequency. The device features a low noise figure of 1.5 dB and a typical DC current gain (hFE) of 110.

Feature Summary

• Dual NPN configuration within a compact surface-mount package
• Optimized for low-noise amplification in the S-band
• High transition frequency supporting high-speed signal processing

Applications

• Low Noise Amplifiers (LNAs)
• RF front-end modules
• Wireless communication systems

Procurement Notes

Verify the specific suffix against manufacturer documentation to confirm pinout compatibility and performance specifications. Ensure the component meets required environmental standards for the intended deployment environment before integration into final designs.

Selection Notes

Select this component when dual matched transistors are required for balanced amplifier stages or differential circuits. Consider the SOT-363 footprint constraints and the 6 V voltage rating during schematic design to ensure operation within safe limits.

Part Context

This part belongs to the CEL Silicon Bipolar Transistor family, specifically the Twin Transistors category. It serves as an integrated solution replacing discrete components, reducing board space while maintaining matched electrical characteristics between the two internal elements.

Replacement Considerations

Consult official substitution lists for equivalent twin transistor packages. Verify that alternative parts match the SOT-363 outline dimensions and maintain comparable fT and noise figure specifications for direct replacement.