UPA806T-T1-A

UPA806T-T1-A

$1.87
  • Description:RF TRANS 2 NPN 6V 12GHZ 6-SUPER
  • Series:-

SKU:ac56ed3cb36d Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS 2 NPN 6V 12GHZ 6-SUPER
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max):6V
  • Frequency - Transition:12GHz
  • Noise Figure (dB Typ @ f):1.5dB @ 2GHz
  • Gain:8.5dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:75 @ 10mA, 3V
  • Current - Collector (Ic) (Max):30mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-SuperMiniMold
  • Grade:-
  • Qualification:-

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UPA806T-T1-A

Overview

The UPA806T-T1-A is an RF bipolar NPN transistor manufactured by CEL. It utilizes silicon technology and is housed in a single-configuration SOIC-6 surface-mount package. The device supports a continuous collector current of 30 mA. It is designed for high-frequency radio frequency applications. The component is supplied in reel or cut tape formats, with a factory pack quantity of 3000 units. The unit weight is recorded at 45.583 mg. This part falls under the RF Bipolar Transistors sub-category within the broader Transistors classification.

Feature Summary

  • High-frequency operation capability for RF signal processing
  • NPN polarity configuration using silicon semiconductor technology
  • Surface-mount design compatible with automated assembly processes

Applications

  • Radio frequency amplification circuits
  • High-frequency signal processing systems
  • RF communication module components

Procurement Notes

Verify availability status carefully as this component is listed with a discontinued lifecycle status. Confirm end-of-life documentation and potential supply constraints before finalizing procurement plans. Check official distributor channels for remaining stock levels and lead time estimates specific to your region. Ensure compliance with RoHS requirements through detailed specification review.

Selection Notes

Select this component for designs requiring a discrete NPN silicon transistor in an SOIC-6 package. Verify that the 30 mA collector current rating meets circuit demands. Consider the high-frequency nature of the device for appropriate RF layout practices. Evaluate alternative sources due to the discontinued manufacturing status.

Part Context

This component belongs to the RF Bipolar Transistors product line from CEL. It serves as a specialized discrete semiconductor device for high-frequency applications. The SOIC-6 packaging distinguishes it from traditional through-hole or other SMD transistor forms. It represents a specific implementation of silicon NPN technology optimized for RF performance characteristics.

Replacement Considerations

No public confirmed substitute part numbers are available for this discontinued component.

UPA806T-T1-AUPA806T-T1-A
$1.87
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