UPA812T-A

Overview

The UPA812T-A is a twin NPN silicon bipolar transistor manufactured by CEL. It integrates two NE681 transistors within a single SOT-363 package. The device operates at a test frequency of 1 GHz with a typical transition frequency (fT) of 9 GHz. Key electrical characteristics include a noise figure of 1.4 dB and a maximum gain of 16.0 dB at 5 V collector-emitter voltage. The unit supports a maximum collector current of 65 mA and a breakdown voltage of 10 V.

Feature Summary

• Dual NPN configuration for compact circuit integration
• High-frequency operation capability up to 9 GHz
• Low noise performance suitable for RF applications

Applications

• RF amplifier stages in wireless communication systems
• Low noise amplification in receiver front ends
• General purpose high-frequency switching circuits

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm pinout compatibility and package variations. Confirm RoHS compliance status directly with the supplier prior to procurement. Ensure the component meets JEITA equivalent specifications required for the target design environment.

Selection Notes

Select this component when dual matched NPN pairs are required in a minimal footprint. The SOT-363 package reduces board space compared to discrete solutions. Evaluate the 65 mA current limit and 10 V breakdown voltage against system requirements to ensure adequate headroom for the intended operating conditions.

Part Context

This part belongs to the CEL Silicon Bipolar Transistor family, specifically designed for high-frequency applications. It serves as a twin-transistor alternative to using two separate discrete components, offering improved matching and reduced parasitic effects in RF designs.

Replacement Considerations

The UPA812T is functionally equivalent to the UPA812T-T1-A variant. Verify package dimensions and pin assignments before substitution to ensure mechanical compatibility.