UPA812T-T1-A

UPA812T-T1-A

  • Description:RF TRANS 2 NPN 10V 7GHZ SOT-363
  • Series:-

SKU:a3945873dd97 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS 2 NPN 10V 7GHZ SOT-363
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:7GHz
  • Noise Figure (dB Typ @ f):1.4dB @ 1GHz
  • Gain:12dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 7mA, 3V
  • Current - Collector (Ic) (Max):65mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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UPA812T-T1-A

Overview

The UPA812T-T1-A is an NPN silicon high-frequency RF bipolar transistor manufactured by CEL. It features a dual configuration within a single SOT-363 surface-mount package. The device supports a maximum collector-emitter voltage of 10V and a continuous collector current of 35mA. It operates with a transition frequency up to 7GHz and dissipates 200mW of power. This component is designed for high-speed switching and amplification applications in radio frequency circuits.

Feature Summary

  • Dual NPN configuration integrated into a compact surface-mount package
  • High-frequency operation capability suitable for RF signal processing
  • Silicon technology construction for reliable performance

Applications

  • RF amplifier stages in communication systems
  • High-frequency signal switching circuits
  • Radio frequency receiver front-end modules

Procurement Notes

Verify the specific suffix T1-A against the manufacturer's official documentation to confirm pinout and electrical characteristics match the design requirements. Confirm RoHS compliance status through the latest datasheet revision. Check lifecycle status as components may be discontinued or subject to limited supply constraints. Ensure the SOT-363 package dimensions align with PCB footprint specifications before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN RF transistor is required in a small outline package. Consider the 7GHz frequency limit and 200mW power dissipation for thermal management. Evaluate the 10V voltage rating against circuit operating conditions. Compare against similar UPA series devices if higher current or different packaging is needed. Verify compatibility with existing RF layout constraints due to the SOT-363 form factor.

Part Context

This part belongs to the UPA series of RF bipolar transistors from CEL, formerly associated with NEC/Renesas technologies. The series includes variants like UPA811T and UPA814T, sharing similar high-frequency capabilities but differing in specific electrical parameters or configurations. These components are typically used in mobile phone and wireless communication hardware requiring compact RF solutions.

Replacement Considerations

Direct substitutes include UPA811T-T1-A and UPA814T-T1-A from the same manufacturer family. Verify pin compatibility and electrical parameter overlaps before substitution. Cross-reference with UPA812T (non-T1) if leaded packaging is acceptable. Consult official replacement guides for lifecycle transitions.

UPA812T-T1-AUPA812T-T1-A

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