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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 1.5A TUMT5
- Series：*
- Mfr：Rohm Semiconductor
- Package：Cut Tape (CT)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The US5K3TR is a single N-channel MOSFET manufactured by ROHM Semiconductor, designed for surface-mount applications. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 1.5 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 240 mΩ at Vgs = 4.5 V. Key electrical parameters include a gate charge (Qg) of 2.2 nC at Vgs = 4.5 V, an input capacitance (Ciss) of 80 pF at Vds = 10 V, and a threshold voltage (Vgs(th)) of 1.5 V at Id = 1 mA. The component operates within a junction temperature range up to 150°C and dissipates up to 1 W of power. It is housed in a TUMT5 package with a 6-SMD, 5-lead configuration.
Feature Summary
- Integrates an isolated Schottky diode alongside the N-channel MOSFET structure.
- Optimized for low gate charge and fast switching performance.
- Supports low-voltage drive conditions with a threshold voltage of 1.5 V.
Applications
- DC-DC converter circuits requiring integrated freewheeling diodes.
- Low-voltage load switching applications.
- Power management modules in portable electronic devices.
Procurement Notes
Verify the specific ordering suffix to confirm the packaging format, such as tape and reel or cut tape, as these affect handling procedures. Confirm RoHS compliance status and moisture sensitivity level requirements against the project specifications before finalizing procurement. Ensure the source documentation matches the exact part number to avoid discrepancies in electrical characteristics.
Selection Notes
Select this component when a compact solution combining an N-channel MOSFET and a Schottky diode is required. The 240 mΩ Rds(on) at 4.5 V drive makes it suitable for low-power switching tasks. Consider the TUMT5 package dimensions for PCB layout constraints. Verify that the 30 V rating aligns with the system's maximum operating voltage to ensure adequate safety margins.
Part Context
This part belongs to the US5U3 series from ROHM Semiconductor, which focuses on small-signal MOSFETs with integrated diodes. The series is characterized by its compact footprint and efficiency in low-voltage environments. The US5K3TR specifically denotes the N-channel variant within this family, sharing design principles with other members like the US5U1TR but differing in polarity and specific electrical ratings.
Replacement Considerations
The US5U1TR is listed as a substitute part number by the manufacturer. Verify compatibility regarding channel type and electrical parameters before replacement.
