US6J11TR

Overview

The US6J11TR is a dual P-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features a SOT-363T (SC-113DA) surface-mount package with six terminals. The device supports a Drain-Source Voltage (V_DSS) of -12 V and a continuous Drain Current (I_D) of -1.3 A. Typical on-resistance (R_DS(on)) values are 0.53 Ω at V_GS = 1.5 V, 0.28 Ω at V_GS = 2.5 V, and 0.19 Ω at V_GS = 4.5 V. The total gate charge (Q_g) is typically 2.4 nC, with a power dissipation (P_D) of 1 W. It operates within a storage temperature range of -55 °C to +150 °C.

Feature Summary

• Low voltage drive capability optimized for 1.5 V operation
• Dual P-channel configuration in a compact surface-mount package
• Fast switching performance suitable for power supply circuits

Applications

• Power supply circuits
• Battery-powered devices requiring low-side switching
• General-purpose low-voltage logic level driving

Procurement Notes

Verify the specific ordering suffix and packaging type when sourcing, as availability may vary between tape-and-reel formats. Confirm RoHS compliance status through official documentation prior to integration. Ensure that the component's 'Not Recommended for New Designs' status aligns with long-term production plans if applicable to the project lifecycle.

Selection Notes

Select this component for designs requiring dual P-channel switching with low gate drive voltages around 1.5 V to 2.5 V. Consider the -12 V drain-source voltage limit and -1.3 A current rating against load requirements. Evaluate the thermal performance given the 1 W power dissipation in the SOT-363T package under expected operating conditions.

Part Context

The US6J11TR belongs to ROHM's US6J series of low-voltage dual P-channel MOSFETs. This series is engineered for applications where standard logic-level drivers cannot efficiently switch P-channel devices due to higher threshold requirements. The part utilizes silicon technology and is housed in a JEITA-compliant SC-113DA footprint.

Replacement Considerations

Check for direct pin-compatible alternatives with similar R_DS(on) characteristics at 1.5 V V_GS. Verify that any substitute maintains the -12 V V_DSS rating and fits within the SOT-363T package dimensions. Ensure the replacement also meets the required Q_g and switching speed specifications for the target application.