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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 1.5A TUMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.5A
- Rds On (Max) @ Id, Vgs：240mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：2.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：80pF @ 10V
- Power - Max：1W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, Flat Leads
- Supplier Device Package：TUMT6
- Grade：-
- Qualification：-
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Overview
The US6K1TR is a dual N-channel MOSFET from ROHM Semiconductor, designed for low-voltage driving applications. It features a TUMT6 (SOT-363T) surface-mount package with six terminals. Key electrical parameters include a Drain-Source Voltage (V_DSS) of 30 V and a continuous Drain Current (I_D) of 1.5 A. The typical on-resistance (R_DS(on)) is 0.24 Ω at a gate-source voltage of 2.5 V, 0.22 Ω at 4 V, and 0.21 Ω at 4.5 V. The total gate charge (Q_g) is typically 1.7 nC, supporting a drive voltage of 2.5 V. Power dissipation is rated at 1 W, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Optimized for 2.5V drive voltage operation to support low-power logic interfaces.
- Dual N-channel configuration in a compact SMD package for space-constrained designs.
- Fast switching characteristics suitable for high-frequency power management applications.
Applications
- Battery protection circuits in portable electronic devices
- Load switches for low-voltage DC-DC converters
- Power management ICs requiring small form factor solutions
Procurement Notes
Verify the supply status carefully before procurement, as this component is marked as not recommended for new designs. Confirm that the ordering suffix TR corresponds to the taping packaging format required by your assembly line. Ensure compatibility with existing inventory strategies given the potential phase-out status.
Selection Notes
Select this part when a dual N-channel MOSFET with a 30V rating and 1.5A current capacity is needed for 2.5V logic-driven systems. Compare R_DS(on) values at 2.5V against alternatives if efficiency at low gate voltages is critical. Consider the TUMT6 package dimensions for PCB layout constraints.
Part Context
The US6K1TR belongs to ROHM's series of dual N-channel MOSFETs optimized for low-voltage driving. It shares the same pinout and package code as the US6K2, though specifications differ. This component is part of a family designed to replace older discrete solutions with integrated dual configurations.
Replacement Considerations
The US6K2TR is listed as a similar specification alternative with the same pinout and package. Verify specific parameter differences such as R_DS(on) and drive voltage requirements before substitution.
