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The US6K2TR is a dual N-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features a TUMT6 (SOT-363T) surface-mount package with dimensions of 2.1x2.0 mm and a thickness of 0.82 mm. The device supports a drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 1.4 A. Typical on-resistance (R_DS(on)) values are 0.27 Ω at V_GS = 4 V, 0.25 Ω at V_GS = 4.5 V, and 0.17 Ω at V_GS = 10 V. The total gate charge (Q_g) is typically 1.4 nC, with a power dissipation rating of 1 W. It operates within a storage temperature range of -55°C to 150°C and complies with RoHS standards.
Verify the specific ordering suffix TR against official ROHM documentation to confirm taping specifications. Confirm that the component status remains acceptable for existing customer support, as new design recommendations may be restricted. Ensure compliance with RoHS requirements and check for any updates regarding lead-free certification before procurement.
Select this component when a dual N-channel configuration is required with a 30V voltage rating and 1.4A current capacity. Consider the 4V drive optimization if the control logic operates at lower voltages. Evaluate the thermal performance given the 1W power dissipation limit in the small TUMT6 package for the specific application environment.
The US6K2TR belongs to ROHM's series of dual N-channel MOSFETs optimized for low-voltage driving. It shares the same die and electrical characteristics as the US6K2 but is supplied in tape-and-reel packaging for automated assembly. This variant is intended for high-volume manufacturing processes where consistent feeding is required.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with direct replacements only through official ROHM cross-reference tools or datasheet comparisons.