US6K2TR

US6K2TR

$0.87
  • Description:MOSFET 2N-CH 30V 1.4A TUMT6
  • Series:-

SKU:ee85539447e8 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 1.4A TUMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:1.4A
  • Rds On (Max) @ Id, Vgs:240mOhm @ 1.4A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:70pF @ 10V
  • Power - Max:1W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, Flat Leads
  • Supplier Device Package:TUMT6
  • Grade:-
  • Qualification:-

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US6K2TR

Overview

The US6K2TR is a dual N-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features a TUMT6 (SOT-363T) surface-mount package with dimensions of 2.1x2.0 mm and a thickness of 0.82 mm. The device supports a drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 1.4 A. Typical on-resistance (R_DS(on)) values are 0.27 Ω at V_GS = 4 V, 0.25 Ω at V_GS = 4.5 V, and 0.17 Ω at V_GS = 10 V. The total gate charge (Q_g) is typically 1.4 nC, with a power dissipation rating of 1 W. It operates within a storage temperature range of -55°C to 150°C and complies with RoHS standards.

Feature Summary

  • Optimized for 4V drive voltage applications to enhance efficiency in low-power systems.
  • Compact SOT-363T surface mount package suitable for space-constrained designs.
  • Fast switching speed characteristics due to low gate charge.

Applications

  • Battery-powered portable devices requiring efficient power management.
  • Low-voltage DC-DC converter circuits.
  • Load switching applications in consumer electronics.

Procurement Notes

Verify the specific ordering suffix TR against official ROHM documentation to confirm taping specifications. Confirm that the component status remains acceptable for existing customer support, as new design recommendations may be restricted. Ensure compliance with RoHS requirements and check for any updates regarding lead-free certification before procurement.

Selection Notes

Select this component when a dual N-channel configuration is required with a 30V voltage rating and 1.4A current capacity. Consider the 4V drive optimization if the control logic operates at lower voltages. Evaluate the thermal performance given the 1W power dissipation limit in the small TUMT6 package for the specific application environment.

Part Context

The US6K2TR belongs to ROHM's series of dual N-channel MOSFETs optimized for low-voltage driving. It shares the same die and electrical characteristics as the US6K2 but is supplied in tape-and-reel packaging for automated assembly. This variant is intended for high-volume manufacturing processes where consistent feeding is required.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with direct replacements only through official ROHM cross-reference tools or datasheet comparisons.

US6K2TRUS6K2TR
$0.87
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