US6M11TR

Overview

The US6M11TR is a dual complementary MOSFET from ROHM Semiconductor, integrating one N-channel and one P-channel transistor within a single SOT-363T (SC-113DA) surface-mount package. Designed for low-voltage applications, it features a drain-source voltage rating of 30V and a continuous drain current of 1.4A. The device offers a typical on-resistance of 0.27 ohms at a 4V gate drive and operates with a drive voltage of 4V. It supports a junction temperature up to 150°C and includes lead-free/RoHS compliance. This component is designated as not recommended for new designs.

Feature Summary

• Complementary N+P channel configuration in a compact SMD package
• Fast switching speed capabilities
• Low on-resistance optimized for 4V drive logic

Applications

• Power supply circuits
• Motor driver interfaces
• General-purpose switching applications

Procurement Notes

Verify the specific suffix 'TR' indicates tape-and-reel packaging when sourcing. Confirm RoHS status and lead-free compliance through official datasheets or authorized distributors. Check current supply status as this model may be restricted for new designs.

Selection Notes

Select this component for space-constrained designs requiring matched N/P pairs. Ensure the driving circuit provides sufficient voltage for the specified 4V threshold. Consider thermal dissipation limits given the small package size and power rating constraints.

Part Context

This part belongs to ROHM's series of small-signal complementary MOSFETs. It serves as an alternative to discrete N and P-channel solutions, simplifying PCB layout and reducing component count in low-power switching environments.

Replacement Considerations

Check for direct pin-compatible substitutes if availability is limited. Verify that any replacement maintains the same 30V rating and similar Rds(on) characteristics to ensure circuit compatibility.