US6M2TR

US6M2TR

$0.85
  • Description:MOSFET N/P-CH 30V/20V 1.5A TUMT6
  • Series:-

SKU:5e137f053887 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V/20V 1.5A TUMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V, 20V
  • Current - Continuous Drain (Id) @ 25°C:1.5A, 1A
  • Rds On (Max) @ Id, Vgs:240mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:80pF @ 10V
  • Power - Max:1W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, Flat Leads
  • Supplier Device Package:TUMT6
  • Grade:-
  • Qualification:-

Download product information

US6M2TR

Overview

The US6M2TR is a complementary MOSFET pair featuring an N-channel and P-channel device in a single SOT-363T package. It operates with a drain-source voltage of 30V for the N-channel and 20V for the P-channel, supporting continuous currents of 1.5A and 1.4A respectively. Typical on-resistance values are 0.24Ω at 2.5V drive for the N-channel and 0.39Ω at 2.5V for the P-channel. The component utilizes a Tumt6 mounting style and includes a tape packaging format with a unit quantity of 3000.

Feature Summary

  • Integrated dual-transistor configuration combining N-channel and P-channel MOSFETs within a compact surface-mount footprint.
  • Optimized for low-voltage driving applications with specified on-resistance characteristics at 2.5V gate drive levels.
  • Designed for high-reliability environments with automotive-grade qualification standards.

Applications

  • Motor driver circuits requiring complementary switching pairs
  • Low-voltage power management systems
  • Automotive electronic control units

Procurement Notes

Verify the specific ordering suffix to ensure correct packaging configuration. Confirm supply status as the base part number may be marked not recommended for new designs. Check RoHS compliance documentation for environmental requirements. Validate package dimensions against PCB layout constraints before finalizing procurement orders.

Selection Notes

Select this component when a matched N-P channel pair is required for synchronous rectification or motor control. Ensure the 2.5V drive capability aligns with the system logic levels. Consider the thermal dissipation limits given the small package size. Verify that the 30V/20V voltage ratings exceed the maximum circuit operating voltages.

Part Context

The US6M2TR belongs to the US6M series of complementary MOSFETs manufactured by ROHM Semiconductor. This series is designed for automotive and industrial applications requiring compact, high-performance switching solutions. The TR suffix indicates tape-and-reel packaging for automated assembly processes.

Replacement Considerations

The UT6MA3 is listed as a similar specification replacement. Note that the UT6MA3 uses a DFN2020-8D package rather than the SOT-363T, requiring PCB layout adjustments. Verify pinout compatibility and electrical parameter alignment before substitution.

US6M2TRUS6M2TR
$0.85
Buy Now