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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.9A SSOT6
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.9A
- Rds On (Max) @ Id, Vgs：170mOhm @ 1.9A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：441pF @ 10V
- Power - Max：700mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：SuperSOT™-6
- Grade：-
- Qualification：-
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Overview
The USB10H is a dual P-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor, now part of onsemi. It operates with a drain-source voltage rating of -20 V and a continuous drain current of -1.9 A at 25°C. The device features an on-state resistance (RDS(on)) of 0.170 Ω maximum at VGS = -4.5 V and 0.250 Ω maximum at VGS = -2.5 V. Packaged in a SuperSOT-6 footprint, it includes two independent channels within a single compact housing.
Feature Summary
- Dual-channel configuration housed in a SuperSOT-6 package for space-constrained designs
- Optimized PowerTrench technology for low on-state resistance and fast switching performance
- Low gate charge characteristics to minimize drive power requirements
Applications
- Load switch circuits
- Battery protection systems
- Power management modules
Procurement Notes
Verify the manufacturer status as Fairchild Semiconductor products are managed under onsemi. Confirm the specific datasheet revision, such as Rev. C or D, matches the required design specifications. Ensure the ordering suffix corresponds to the correct reel size and tape width for automated assembly processes.
Selection Notes
Select this component when a dual P-Channel solution is required in a minimal footprint. The SuperSOT-6 package offers a significantly smaller area compared to standard SO-8 packages. Evaluate thermal constraints carefully, as junction-to-ambient resistance varies based on copper pad dimensions and board layout.
Part Context
This component belongs to the PowerTrench family of MOSFETs developed by Fairchild Semiconductor. The series utilizes advanced trench technology to achieve high performance in small form factors. Fairchild Semiconductor has since been acquired by onsemi, which continues to support these legacy devices.
Replacement Considerations
Check for updated part numbers from onsemi if the original Fairchild designation is discontinued. Verify that any substitute maintains the SuperSOT-6 pinout compatibility and meets the -20 V / -1.9 A electrical ratings.
