UT6J3TCR

Overview

The UT6J3TCR1 is a dual P-channel enhancement-mode MOSFET manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in an 8-pin DFN-2020-8D surface-mount package. The device features a drain-source breakdown voltage of 20 V and a continuous drain current of 2 A per channel. Key electrical characteristics include a typical on-resistance of 85 mΩ, a gate charge of 8.5 nC, and a threshold voltage of 1 V. It supports a maximum power dissipation of 2 W and operates within a temperature range of -55°C to +150°C.

Feature Summary

• Dual P-channel configuration for compact circuit integration
• Low on-resistance for efficient power switching
• Enhanced thermal stability with high junction temperature rating

Applications

• Power supply circuits
• Battery protection modules
• Motor driver interfaces

Procurement Notes

Verify the exact part number suffix during procurement. The provided data references UT6J3TCR1, which may differ from UT6J3TCR. Confirm that the ordering suffix matches the required packaging or specification variant before finalizing orders to ensure component compatibility.

Selection Notes

Select this component for applications requiring dual P-channel switching in a small footprint. Ensure the drive voltage aligns with the specified gate-source limits. Verify that the 2 A current rating and 2 W power dissipation meet the thermal requirements of the target design environment.

Part Context

This component belongs to the ROHM UT6J series of dual MOSFETs. It shares the DFN2020-8D package form factor with other variants in the lineup, such as the UT6JA3TCR and UT6K3TCR1, allowing for potential mechanical interchangeability if electrical parameters are compatible.

Replacement Considerations

The UT6K3TCR1 is listed as a similar level part with comparable specifications. Verify electrical differences, particularly regarding channel polarity and current ratings, before substituting.